Integrierte Schaltungsstruktur mit Vorderseitig Geschnittenem Rückseiten-Source- oder Drainkontakt

Details

Veröffentlichungs-Nr.

EP4580345

Aktenzeichen

EP24220377

Anmeldetag

16. Dezember 2024

Veröffentlichung

2. Juli 2025

Rechtsraum

EP

IPC

H10D84/01H10D30/01H10D30/43H10D30/00H10D84/83

Abstract

Integrated circuit structures having front-side-cut backside source or drain contacts are described. In an example, an integrated circuit structure includes a first gate stack over a first plurality of horizontally stacked nanowires or fin, and a second gate stack over a second plurality of horizontally stacked nanowires or fin. A first epitaxial source or drain structure is at an end of the first plurality of horizontally stacked nanowires or fin, the first epitaxial source or drain structure having a backside contact structure thereon. A second epitaxial source or drain structure is at an end of the second plurality of horizontally stacked nanowires or fin, the second epitaxial source or drain structure having a backside dielectric structure thereon, the backside dielectric structure laterally spaced apart from the backside contact structure. A dielectric gate cut plug is laterally between and in contact with the backside dielectric structure and the backside contact structure.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA

Fachgebiete