Ringbasierte Anpassungsnetzwerke und Verfahren
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4607590
- Aktenzeichen
- EP24305306
- Anmeldetag
- 26. Februar 2024
- Veröffentlichung
- 27. August 2025
- Rechtsraum
- EP
- IPC
- H01L23/522H01L23/64H01L23/66H01L23/498H03H1/00H03H7/01
Abstract
An electronic device may include semiconductor wafer including a semiconductor substrate and multiple layers on the semiconductor substrate. The multiple layers may include metal layers and dielectric layers forming a circuit and an on-chip pad configured to receive a signal. The device may include a ring-based matching network and a wire trace. The network may include one or more rings arranged within the multiple layers and extending around the on-chip pad to provide a selected impedance compensation to the received signal to produce a compensated signal. Each ring may have a selected width and a selected spacing relative to one or more of the on-chip pad or another ring. The wire trace may be configured to couple the on-chip pad to the circuit to provide the compensated signal. In some embodiments, one of the rings may be connected to or may be capacitively coupled to the on-chip pad.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
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