Planartransformator mit Verbesserter Zuverlässigkeit

Details

Veröffentlichungs-Nr.

EP4629268

Aktenzeichen

EP25163749

Anmeldetag

14. März 2025

Veröffentlichung

8. Oktober 2025

Rechtsraum

EP

IPC

H01F19/08H01F27/28H01F27/32

Abstract

Galvanic insulation device (2) comprising: an upper coil (2a) extending into a first insulating layer (8); a lower coil (2b) extending into a second insulating layer (9); a galvanic insulation region (11) extending between the first (8) and the second (9) insulating layers; and at least a first conductive via (15; 18). Each of the upper coil (2a) and the lower coil (2b) comprises a respective plurality of turns (4; 5) and furthermore a respective first electrical contact region (4a; 5a) and a respective second electrical contact region (4b; 5b), electrically coupled to the respective plurality of turns (4; 5). The first conductive via (15; 18) is coupled to a first structural portion (28; 30) of the upper coil (2a) or the lower coil (2b), coupled to the respective turns (4; 5) or to the respective first (4a; 5a) or second (4b; 5b) electrical contact region. The first structural portion (28; 30) comprises a first stress dissipation region (24; 26) having a curved shape and having a first end (24'; 26') misaligned along a first axis (Z) with respect to the other of the upper coil (2a) and the lower coil (2b).

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz

Fachgebiete