Silizium Grabenfüllung zwischen -Source-Und-Drain- für Breitere Kontakte

Details

Veröffentlichungs-Nr.

EP4672310

Aktenzeichen

EP25185022

Anmeldetag

24. Juni 2025

Veröffentlichung

31. Dezember 2025

Rechtsraum

EP

IPC

H01L21/768H01L23/485H01L23/532H10D30/00

Abstract

Integrated circuit (IC) devices having contacts to source and drain bodies in narrow trenches. An IC device includes first and second source or drain bodies in first and second transistors, first and second contact structures on the first and second source or drain bodies, and a dielectric between the first and second source or drain bodies and between the first and second metallization structures, and the dielectric may consist of substantially pure silicon, for example, amorphous silicon. The dielectric includes silicon and is devoid of oxygen and nitrogen. The contact structures may be formed using an etch of the silicon dielectric in the contact trenches that is selective to other dielectrics.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA

Fachgebiete