Sic-Epitaxialwafer

Details

Veröffentlichungs-Nr.

EP4711508

Anmeldetag

9. September 2025

Veröffentlichung

18. März 2026

Rechtsraum

EP

IPC

(DENSO CORP et al.)(SHOWA DENKO KK et al.)(SK SILTRON CO LTD et al.)

Abstract

The SiC epitaxial wafer has a notch. The notch has a first side and a second side that connect the innermost point of the notch and an outer circumference of the wafer. The first side is in a [-1-120] direction from the innermost point, and the second side is in a [11-20] direction from the innermost point. A position of 0.5 mm from a middle point of the first side in a [-1100] direction is set as a first measurement point, and a position of 0.5 mm from a middle point of the second side in the [-1100] direction is set as a second measurement point. A film thickness variation at the first measurement point and the second measurement point of the SiC epitaxial layer of the SiC epitaxial wafer is less than 10%.

Anmelder

Firma

Resonac Corporation

Land

🇯🇵 Japan