Strehl & Partner mbB

The invention relates to an electromechanical assembly tool (10) including a housing (12), a torque motor (16), a planetary roller screw (18) and a linearly movable pincer head wedge (30), wherein the torque motor (16) includes a stator (38) and a rotor (40), wherein the stator (38) is mounted in the housing (12) and the rotor (40) is clamped and fixed on the rotatable but axially fixed spindle (32) of the planetary roller screw (18). The planetary roller screw (18) includes a spindle (32), a nut (34) and plural planetary rollers (36), wherein the nut (34) held in the housing (12) in an axially moveable but non-rotatable manner and axially connected to the pincer head wedge (30) such that the rotary movement of the motor rotor (40) is converted into a linear movement of the nut (34) and of the pincer head wedge (30).It is proposed that the rotor (40) of the torque motor (16) is directly mounted on the rotatable spindle (32) of the planetary roller screw (18).

To provide a method for preparing a radiopharmaceutical that can relatively easily prepare radium-224, a progeny (daughter) nuclide, from thorium-232, which exists in relatively large amounts in nature. A method for preparing a radiopharmaceutical, comprising separating and recovering and purifying the progeny (daughter) nuclide radium-224 from thorium-232 by chemical operation, and using it as a targeted α-ray therapeutic agent.

In acquired images, in each of divided zones obtained by j-dividing a reflecting light area in a strip width direction, a most upstream position of boundary positions on an upstream side and a most downstream position of boundary positions on a downstream side of the reflecting light area are determined, differences between positional data of the boundary positions on a most upstream side and positional data of boundary positions on a most downstream side are calculated for the respective divided zones in each of the acquired images as representing information corresponding to a maximum length in a rolling direction of the reflecting light area in a (k)th image and are made to correspond to a center position in the strip width direction of the divided zone i, and providing a value indicative of a position in the strip width direction is referred to as a variable x, a position in the strip width direction within a strip width region in the area in the image is standardized into a range of -1 ≤ x ≤ 1, the value of the information is applied, as an index corresponding to the rolled metal strip buckle distribution in the strip width direction obtained from the (k)th image, to a Chebyshev polynomial, where coefficients thereof are determined, and a coefficient C<1>' of a 1st term thereof is transmitted as a signal representing a detected result of the rolled metal strip buckle distribution of a 1st component in the strip width direction in the (k)th image.

In acquired images, in each of divided zones obtained by j-dividing a reflecting light area in a strip width direction, a most upstream position and a most downstream position of boundary positions on an upstream side and a most upstream position and a most downstream position of boundary positions on a downstream side of the reflecting light area are determined, differences between a fluctuating range of boundary positions on a most upstream side and a fluctuating range of boundary positions on a most downstream side are calculated for the respective divided zones in each of the acquired images as representing information corresponding to a maximum fluctuating amplitude of the reflecting light area in a (k)th image and are made to correspond to a center position in the strip width direction of the divided zone i, and providing a value indicative of a position in the strip width direction is referred to as a variable x, a position in the strip width direction within a strip width region in the area in the image is standardized into a range of -1 ≤ x ≤ 1, the value of the information is applied, as an index corresponding to the rolled metal strip buckle distribution in the strip width direction obtained from the (k)th image, to a Chebyshev polynomial, where coefficients thereof are determined, and a coefficient C<1>' of a 1st term thereof is transmitted as a signal representing a detected result of the rolled metal strip buckle distribution of a 1st component in the strip width direction in the (k)th image.

A uterine manipulator device includes: an elongated cannulated tube having proximal and distal ends, a cervical cup positioned on the elongated cannulated tube with a top distal portion of a first diameter and a base proximal portion of a second smaller diameter, and an occluder assembly comprising an occluder positioned proximally from the cervical cup on the elongated cannulated tube, the occluder having a body with at least one primary rib and at least two secondary ribs, wherein a diameter of at least one secondary rib is smaller than the diameter of the primary rib.

Die Erfindung geht aus von einem Endeffektor (41) für einen Kommissionierroboter (10), umfassend eine Befestigungsschnittstelle (44) zum Anschluss an eine Endschnittstelle (46) eines Greifarms (14) des Kommissionierroboters (10) und einen Sauggreifer (20) zum Greifen von zu kommissionierenden Artikeln (28), dadurch gekennzeichnet, dass der Endeffektor (41) eine Bild- oder Datenerfassungsvorrichtung (36) zum Erfassen von auf dem Artikel (28) vorgesehenen Identifikationsinformationen umfasst

The SiC epitaxial wafer has a notch. The notch has a first side and a second side that connect the innermost point of the notch and an outer circumference of the wafer. The first side is in a [-1-120] direction from the innermost point, and the second side is in a [11-20] direction from the innermost point. A position of 0.5 mm from a middle point of the first side in a [-1100] direction is set as a first measurement point, and a position of 0.5 mm from a middle point of the second side in the [-1100] direction is set as a second measurement point. A film thickness variation at the first measurement point and the second measurement point of the SiC epitaxial layer of the SiC epitaxial wafer is less than 10%.

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …