Reflektierender Maskenrohling

Details

Veröffentlichungs-Nr.

EP4711848

Anmeldetag

23. Juli 2025

Veröffentlichung

18. März 2026

Rechtsraum

EP

IPC

G03F1/24, G03F1/58(SHIN CHEOL et al.)(KANAYAMA KOICHIRO et al.)

Abstract

A reflective mask blank including a substrate, a multilayer reflection film that is formed on the substrate and reflects exposure light, a protection film that is formed on the multilayer reflection film, and an absorber film that is formed in contact with the protection film and absorbs the exposure light is provided. The reflective mask blank is a material for a reflective mask used in EUV lithography using EUV light as the exposure light. The absorber film includes a main region that occupies not less than 94 % of a thickness of the absorber film, the main region consists of tantalum and nitrogen and is constituted of multiple layers that include at least one low nitrogen content layer having a nitrogen content of not more than 20 at%, and at least one high nitrogen content layer having a nitrogen content of 40 at% to 60 at%.

Anmelder

Firma

SHIN-ETSU CHEMICAL CO., LTD.

Land

🇯🇵 Japan