Halbleiterbauelement mit Fehlererkennungsschaltung

Details

Veröffentlichungs-Nr.

EP4712082

Anmeldetag

12. September 2025

Veröffentlichung

18. März 2026

Rechtsraum

EP

Abstract

A semiconductor device includes a first structure (100) including first test pads (TP1), a second structure (200) disposed on the first structure (100) and including second test pads (TP2) that respectively correspond to the first test pads (TP1) and form a test pad chain (TPC) with the first test pads (TP1), a first terminal connected to one end of the test pad chain (TPC), a plurality of fault detection circuits (FDC) connected to the test pad chain (TPC) to detect a connection status of the test pad chain (TPC), and a second terminal connected to the other end of the test pad chain (TPC).

Anmelder

Firma

SAMSUNG ELECTRONICS CO., LTD.

Land

🇰🇷 Südkorea