Qubit-Vorrichtung und Verfahren zur Herstellung einer Qubit-Vorrichtung

Details

Veröffentlichungs-Nr.

EP4712751

Anmeldetag

4. September 2025

Veröffentlichung

18. März 2026

Rechtsraum

EP

IPC

H10N69/00(RIGETTI & CO LLC et al.)(FUJITSU LTD et al.)

Abstract

A qubit device (100) includes a first qubit substrate (10a) having a first qubit (30a) formed on a first surface (12a), a second qubit substrate (10b) having a second qubit (30b) formed on a second surface (12b), a connection substrate (40) disposed to face the first surface and the second surface, and a spacer portion (50) provided to be located at least between the connection substrate and the first qubit substrate, wherein the first surface and the second surface are located in a same plane, and the spacer portion is provided to be in contact with a third surface (15a) that is provided in a peripheral portion of the first qubit substrate and is lower than the first surface.

Anmelder

Firma

Fujitsu Limited

Land

🇯🇵 Japan

Fachgebiete