3D-Halbleitervorrichtung mit Interposer und Verfahren dafür

Details

Veröffentlichungs-Nr.

EP4712753

Anmeldetag

18. August 2025

Veröffentlichung

18. März 2026

Rechtsraum

EP

Abstract

A method of forming a semiconductor device is provided. The method include forming an interposer having a first set of conductive connection pads exposed at a first major side of an interposer substrate and a second set of conductive connection pads exposed at a second major side of the interposer substrate. A first semiconductor wafer is mounted on the first major side of the interposer substrate and a second semiconductor wafer is mounted on the second major side of the interposer substrate. A sandwich-like structure is formed by the first semiconductor wafer, interposer, and second semiconductor wafer. The sandwich-like structure is singulated to form a plurality of individual semiconductor device units. A plurality of sidewall connection pads are exposed along an outer perimeter of the interposer.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande