Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4716406

Anmeldetag

10. Dezember 2024

Veröffentlichung

25. März 2026

Rechtsraum

EP

Abstract

A semiconductor device includes a substrate structure (100), a source structure (110), a drain structure (120), and a gate structure (130). The source structure, the drain structure, and the gate structure are over the substrate structure and are arranged along a first direction (D1). The drain structure includes a plurality of first island structures (121) and a plurality of second island structures (122) arranged alternately and spaced apart along a second direction (D2). The second direction is substantially perpendicular to the first direction. Each of the first island structures includes a p-type semiconductor layer (121a) and a first metal electrode (121b) over the p-type semiconductor layer. Each of the second island structures (122) includes a second metal electrode (122a). In a conducting state, a potential of the first metal electrode of each of the first island structures is different from a potential of the second metal electrode of each of the second island structures.

Anmelder

Firma

Hon Hai Precision Industry Co., Ltd.

Land

🇹🇼 Taiwan