Komplementäre Gate-Schneidstecker zur Belastungsoptimierung

Details

Veröffentlichungs-Nr.

EP4716409

Anmeldetag

1. August 2025

Veröffentlichung

25. März 2026

Rechtsraum

EP

Abstract

An integrated circuit (IC) device having complementary dielectric plugs separating gate electrodes. An IC device includes a first gate-cut plug of silicon and nitrogen between and in contact with two gate structures of transistors of a first conductivity type and a second gate-cut plug between and in contact with two gate structures of transistors of a second conductivity type, complementary to the first conductivity type, and the second gate-cut plug has within a liner of silicon and nitrogen either an airgap or a dielectric of silicon and oxygen. Pairs of gate structures of transistors having both of the first and second conductivity types are separated by first and second gate-cut plugs.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA