Selektive Nanobandentfernung und -Verdünnung für Beabstandeten Transistoren mit Breitem Band zu Band

Details

Veröffentlichungs-Nr.

EP4718978

Anmeldetag

17. September 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Devices, transistor structures, systems, and techniques are described herein related to gate all around field effect transistors having nanoribbons selectively removed to allow for thicker gate dielectric materials. In forming an alternating stack of semiconductor and sacrificial layers, a cladding layer is applied to those semiconductor layers to be removed during nanoribbon release. Prior to nanoribbon release, atoms of the cladding layer are diffused into only those semiconductor layers having the cladding. During nanoribbon release etch, the sacrificial layers and those semiconductor layers having diffused atoms therein are removed while the semiconductor layers without cladding remain. By removing nanoribbons, an increased ribbon-to-ribbon spacing is attained for application of thicker gate dielectric materials in gate all around field effect transistors.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA