Source- oder Drain-Strukturen mit Vertikalen Gräben mit Kontakten Darin

Details

Veröffentlichungs-Nr.

EP4718983

Anmeldetag

14. August 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Integrated circuit structures having source or drain structures with vertical trenches having contacts therein are described. In an example, an integrated circuit structure includes a stack of nanowires above a sub-fin. An epitaxial source or drain structure is at an end of the stack of nanowires, the epitaxial source or drain structure having a trench therein. A conductive contact is in the trench and extends above the epitaxial source or drain structure, or an epitaxial layer is along sides and a bottom the trench and a conductive contact is within the epitaxial layer and extends above the epitaxial layer, where the epitaxial layer includes gallium.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA