Halbleiterchip mit Vertikaler Transistorvorrichtung

Details

Veröffentlichungs-Nr.

EP4718990

Anmeldetag

26. September 2024

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

The invention relates to a semiconductor die (1) with a semiconductor body (10), the semiconductor die (1) comprising: a vertical transistor device (20); an additional transistor device (40) comprising a channel region (43.1) configured for a vertical current flow; an isolation trench (60) extending into the semiconductor body (10); an isolation well (70) made of a second doping type; the isolation well (70) being arranged vertically below the additional transistor device (40), the isolation trench (60) being arranged laterally between the additional transistor device (40) and the vertical transistor device (20), wherein the isolation trench (60) extends to a depth (65) which lies vertically between an upper end (70.1) of the isolation well (70) and the second side (10.2) of the semiconductor body (10).

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich