Hybride (100)-Oberflächen und 110-Oberflächen Band-Fets in Integriertem Prozessfluss

Details

Veröffentlichungs-Nr.

EP4718993

Anmeldetag

7. August 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Integrated circuit (IC) devices having nonplanar transistor structures of complementary conductivity type.An IC device includes first and second transistors with a stack of nanoribbons in a channel region of the first transistor and one or more fins in a channel region of the second transistor, and the one or more fins may be on a trench isolation over the substrate. The nanoribbons may have upper and lower (100) surfaces, and sidewalls of the one or more fins may be (110) surfaces. The fins on the isolation structure may be between stacks of nanoribbons, the nanoribbons may be over subfins of the substrate, and the isolation structure may be between the subfins.The fins may be epitaxially grown as vertical nanoribbons from (and with a same crystal lattice and alignment as) a sidewall of the stack of nanoribbons in the first transistor.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA