Silicium-Auf-Isolator-Integration für Rückseitige Stromversorgung mit Gate-All-Around-Transistoren und Diodenvorrichtungen

Details

Veröffentlichungs-Nr.

EP4718994

Anmeldetag

13. August 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Devices, transistor structures, systems, and techniques are described herein related to silicon on insulator (SOI) substrate integration for gate all around field effect transistors and diode devices. An integrated circuit die includes a diode device having a semiconductor layer, which is on an insulator layer of the SOI substrate, and an integrated gate all around field effect transistor fabricated within a well in the semiconductor layer to form nanoribbons each within a thickness of the semiconductor layer and absent a device subfin.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA