Integrierte Elektronische Vorrichtung mit Verbesserter Entkopplung der Halbleitenden Wannen und Zugehöriges Herstellungsverfahren

Details

Veröffentlichungs-Nr.

EP4718996

Anmeldetag

12. September 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Integrated electronic device (60) including: an upper semiconductive region (22) of a first conductivity type; a first and a second semiconductive well (24,30) of a second conductivity type, which extend in the upper semiconductive region (22); a first electronic component (2) formed in the first semiconductive well (24) and including a terminal (M2) coupled to the first semiconductive well (24); and a second electronic component (38) formed in the second semiconductive well (30) and including a terminal (M3), which is coupled to the second semiconductive well (30) and receives an electrical signal. The electronic device also includes a decoupling structure (48,62,149) interposed between the first and the second semiconductive wells (24,30) and including: a third semiconductive well (62) of the second conductivity type, which is arranged facing the second semiconductive well (30); a biasing terminal (T<p>) coupled to the third semiconductive well (62) and set to a supply voltage (VIN); and a barrier structure (149), which is arranged facing the first semiconductive well (24) and comprises a separation semiconductive region (49) of the first conductivity type and a dielectric structure (46,68) which laterally delimits the separation semiconductive region (49). Figure 5

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz