Selbstausgerichtete Rückseiten-Durchkontaktierungen mit Endpunkt-Unterfinätzung

Details

Veröffentlichungs-Nr.

EP4719026

Anmeldetag

23. Juli 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Semiconductor devices and systems with self-aligned backside contacts, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes a channel, a source and a drain, source and drain contacts, and a gate. The channel includes multiple channel structures arranged vertically and substantially in parallel. The source and the drain are at opposite ends of the channel. The source and drain contacts are coupled to the source and the drain, respectively. Moreover, one of the source contact or the drain contact is above the source or the drain and the other of the source contact or the drain contact is below the source or the drain. The gate is around the channel structures, where a portion of the gate below the channel structures is thicker than respective portions of the gate between the channel structures in cross-section view.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA