In einer Metallisierungsschicht-Kontaktierungsvorrichtungsschicht Implementierte Gate-Zu-Source-Drain-Kontaktverbindungen

Details

Veröffentlichungs-Nr.

EP4719029

Anmeldetag

16. September 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Integrated circuit (IC) devices having transistors with gate electrodes coupled to a source or drain, for example, diode-connected transistors.An IC device may include a metallization level on a transistor (e.g., on and over a device layer), with a continuous first metal body in the metallization level and directly on a source or drain contact and the gate electrode. A second metal body in the metallization level may be on the other of the source or drain contacts. The metallization level (including the first and second metal bodies) may have a lower interface plane that contacts an upper contact plane of the transistor (e.g., gate electrode and source and drain contacts). The metallization level may have an upper interface plane that may be contacted by vias from an interconnect network over the transistor.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA