Material zur Bildung eines Organischen Films, Substrat zur Herstellung eines Halbleiterbauelements, Strukturierungsverfahren und Aromatisches Carbonsäureanhydrid

Details

Veröffentlichungs-Nr.

EP4722194

Anmeldetag

2. Oktober 2025

Veröffentlichung

8. April 2026

Rechtsraum

EP

IPC

(EARLS JIMMY DAN et al.)(KORI DAISUKE et al.)(HITACHI LTD et al.)(HERGENROTHER PAUL M et al.)

Abstract

The present invention is a material for forming an organic film, containing: (A) a compound represented by the following general formula (1A); and (B) an organic solvent, where W₁ represents an n1-valent organic group, "n1" represents an integer of 2 to 4, X₁ represents a group represented by the following general formula (1B), "n2" represents 1 or 2, and R₁ represents any of groups represented by the following formulae (1C). This can provide: a compound for forming an organic film that cures under film formation conditions in an inert gas as well as in air, and makes it possible to form an organic film that is not only excellent in heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also has favorable film-formability on and adhesiveness to a substrate; a material for forming an organic film, containing the compound; a substrate for manufacturing a semiconductor device including the material; a method for forming an organic film, using the material; a patterning process using the material; and an aromatic carboxylic anhydride having a crosslinkable moiety, expected to be an industrially useful raw material such as electronic materials and aerospace materials.

Anmelder

Firma

SHIN-ETSU CHEMICAL CO., LTD.

Land

🇯🇵 Japan