Gate-Kommutierter Thyristor und Verfahren zu Seiner Herstellung

Details

Veröffentlichungs-Nr.

EP4723827

Anmeldetag

31. Mai 2024

Veröffentlichung

5. Dezember 2024

Rechtsraum

EP

Abstract

The present disclosure provides a gate-commutated thyristor and a preparation method therefor. The gate-commutated thyristor comprises: a first conductivity type base region; a second conductivity type base region provided on the first conductivity type base region; the second conductivity type base region comprising a second conductivity type third base region provided on the first conductivity type base region, a second conductivity type second base region provided on the second conductivity type third base region, and a second conductivity type first base region provided on the second conductivity type second base region; a first conductivity type emitter having a boss structure and covering a part of an upper surface of the second conductivity type first base region; and second conductivity type doped regions located on both sides of the second conductivity type first base region and the second conductivity type second base region. According to the present disclosure, the current turn-off capability of the gate-commutated thyristor can be improved.

Anmelder

Firma

Tsinghua University

Land

🇨🇳 China