Gate-Kontakt-Struktur über ein Aktives Gate und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP4723832

Anmeldetag

28. August 2013

Veröffentlichung

8. April 2026

Rechtsraum

EP

Abstract

An integrated circuit structure (500) comprises: a gate stack structure (308D) comprising a gate dielectric layer and a gate electrode, the gate stack structure having a first side and a second side, the second side laterally opposite the first side; a first trench contact (310B) laterally spaced apart from the first side of the gate stack structure; a first spacer (520) laterally between the first trench contact and the first side of the gate stack structure; a second trench contact (310C) laterally spaced apart from the second side of the gate stack structure; a second spacer (520) laterally between the second trench contact and the second side of the gate stack structure; and an insulating cap layer (322, 522) on a top surface of the first spacer, on a top surface of the gate stack structure, on a top surface of the second spacer, and laterally between the first trench contact and the second trench contact.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA