Transistorvorrichtung, Speichervorrichtung und Verfahren zum Betrieb einer Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP4723833

Anmeldetag

2. Oktober 2024

Veröffentlichung

8. April 2026

Rechtsraum

EP

Abstract

According to an aspect there is provided a field-effect transistor device (100) comprising: a semiconductor layer (101) of a wide-bandgap semiconductor, the semiconductor layer comprising a source region (102), a drain region (104) and a floating body region (106) between the source region (102) and the drain region (104); a first gate (108) and a second gate (110) arranged along the floating body region (106) of the semiconductor layer (101), wherein the first gate (108) is arranged at a first side (101a) of the semiconductor layer and the second gate is arranged at a second side (102b) of the semiconductor layer (101), opposite the first side (101a); and a charge storage island (114) arranged along the floating body region (106) in contact with the second side (101b) of the semiconductor layer (101) such that the charge storage island (114) is arranged between the floating body region (106) and the second gate (110), wherein the charge storage island (114) is configured to define a potential well for charge carriers attracted from a channel induced in the floating body region (106) during an on-state of the transistor device (100).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien