Integrierte Schaltungsanordnungen mit Gestapelten Transistoren und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4723835

Anmeldetag

24. Juli 2025

Veröffentlichung

8. April 2026

Rechtsraum

EP

Abstract

Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a substrate (100); an insulator (110) on an upper surface of the substrate (100); a transistor (140) between the substrate (100) and the insulator (110), the transistor (140) comprising: channel layers (102) that are spaced apart from each other in a first direction that is perpendicular to the upper surface of the substrate (100); and a gate structure (104, 106, 108) on the channel layers and the insulator (110), wherein a width (W1) of the insulator (110) in a second direction that is parallel with the upper surface of the substrate (100) is equal or substantially equal to a width (W1) of an uppermost one of the channel layers (102) in the second direction.

Anmelder

Firma

SAMSUNG ELECTRONICS CO., LTD.

Land

🇰🇷 Südkorea