Mit einem Magnetoresistiven Direktzugriffsspeicher (mram) Implementierter Temperatursensor

Details

Veröffentlichungs-Nr.

EP4726720

Anmeldetag

7. Oktober 2025

Veröffentlichung

15. April 2026

Rechtsraum

EP

Abstract

Built-in self-test circuitry is configured to calculate a sensed temperature using an MRAM and a stored set of margin read reference and temperature correlations for a target bit error rate. A current margin read reference is selected, and a sweep through a sequence of addresses of the MRAM is performed using the current margin read reference. At each address of the sequence, a normal read is performed to obtain normal read data and a margin read is performed to obtain margin read data. A bit error count is obtained for the sweep based on comparisons between the normal and margin read data obtained at each address, and the current margin read reference is selectively modified based on whether or not the bit error count achieves the target bit error rate. The selectively modified current margin read reference and the stored set of correlations are used to calculate the sensed temperature.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA