Auf Galliumnitrid Basierende Integrierte Bidirektionale Schaltleistungsvorrichtung mit Substratvorspannungsdioden

Details

Veröffentlichungs-Nr.

EP4727290

Anmeldetag

10. Oktober 2025

Veröffentlichung

15. April 2026

Rechtsraum

EP

IPC

(IMAM MOHAMED et al.)(BAHL SANDEEP R et al.)(ZHAO QIYUE et al.)(BERGOGNE DOMINIQUE et al.)(LEE KUO-HSING et al.)

Abstract

Integrated bidirectional switch power device (930) based on gallium nitride, comprising a die (40) integrating a first and a second switch FET transistor (31, 32), and a substrate-biasing network (35; 635; 735; 835) configured to electrically couple the substrate node (SUB, 61) selectively to the source region of the first and the second switch FET transistors which is at a lower potential. The substrate-biasing network has a first and second diode (D1, D2) coupled in anti-series and formed by field effect, diode-connected transistors (M1, M2) having the same structure as the first and the second switch FET transistors (31, 32) in the same conduction, contact and gate layers. At least one resistor (R, R1, R2) has a terminal coupled to the substrate node (SUB, 61) and is formed by a resistive portion of the channel layer (43.3), laterally to a channel region (65) in a semiconductor body (41) of the die (40).

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz