Einzelsilicium-Chipstruktur mit mehreren Sensorbereichen

Details

Veröffentlichungs-Nr.

EP4729910

Anmeldetag

10. September 2025

Veröffentlichung

22. April 2026

Rechtsraum

EP

IPC

G01L9/00, B81C1/00

Abstract

A pressure sensor component comprising a base wafer comprising a first piezoresistive Wheatstone bridge that is configured to measure a first pressure range associated with a first pressure that is applied onto a surface of the base wafer; and a top wafer that is coupled to the surface, the top wafer comprising (i) a diaphragm that includes a pin element, (ii) a second piezoresistive Wheatstone bridge that is configured to measure a second pressure range that is associated with a force that opposes the first pressure at a base of the pin element, and (iii) a third piezoresistive Wheatstone bridge that is configured to measure a third pressure range that is associated with beam stress at a perimeter of the diaphragm.

Anmelder

Firma

HONEYWELL INTERNATIONAL INC.

Land

🇺🇸 USA