Verfahren zur Herstellung einer Halbleiterdurchverbindung

Details

Veröffentlichungs-Nr.

EP4730333

Anmeldetag

21. Oktober 2024

Veröffentlichung

22. April 2026

Rechtsraum

EP

IPC

(CHOI KISIK et al.)

Abstract

A thinned semiconductor substrate (1) is provided having a front end of line (FEOL) portion (2) on its front side. The FEOL portion includes conductive structures (3,40) at the front side of the thinned substrate, which need to be contacted by connections through the substrate. An opening (15) is etched from the back of the thinned substrate, to be filled with a conductive material. The bottom of said opening overlaps at least partially the end surface (14) of the conductive structure to be contacted, and further overlaps one or more portions of semiconductor material of the substrate. According to the invention, etching of the opening continues beyond the end surface into said semiconductor portion(s), to thereby create one or more cavities (27). A first dielectric layer (30) is formed on the sidewalls and bottom of the opening, so that the cavity or cavities are filled with the material of the first layer. This material is then removed everywhere except in the cavity or cavities (27). If necessary, a second dielectric layer (31) may be formed as a liner on the sidewalls and bottom of the opening (15), to be opened up at the bottom by an anisotropic etch to thereby expose said end surface (14), but wherein the dielectric of the first layer remains in the cavity or cavities (27). These dielectric-filled cavities thereby inhibit the formation of shorts between the eventual through-connection (18,43) obtained by filling the opening, and the semiconductor material of the substrate (1)..

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien