Verfahren zur Herstellung einer Integrierten Vorrichtung durch Strukturierung einer Barriere nach der Anodisierung

Details

Veröffentlichungs-Nr.

EP4730946

Anmeldetag

17. Oktober 2024

Veröffentlichung

22. April 2026

Rechtsraum

EP

IPC

(LALLEMAND FLORENT et al.)(OUKASSI SAMI et al.)

Abstract

The invention concerns a method of forming at least one integrated device comprising:depositing a metal barrier layer (103) on a non-conducting substrate (100),depositing an anodizable metal layer (104) on the metal barrier layer,obtaining at least a first porous region (105A) comprising a plurality of substantially straight pores that extend from a top surface of the first porous region towards the metal barrier layer by anodizing the anodizable metal layer (104),depositing, on the first porous region(105A), an etching mask (EM) having at least one opening (OP) defining an etching zone,obtaining an insulating region (V) by etching the metal barrier layer located at the bottom of the etching zone through the opening of the etching mask so as to reach the substrate,forming said integrated device inside the pores of the first porous region.

Anmelder

Firma

Murata Manufacturing Co., Ltd.

Land

🇯🇵 Japan