Dünnschichttransistor mit Anorganischem Halbleiterkanal und Verfahren zu Seiner Herstellung

Details

Veröffentlichungs-Nr.

EP4730949

Anmeldetag

21. November 2024

Veröffentlichung

22. April 2026

Rechtsraum

EP

Abstract

A thin-film transistor using an inorganic semiconductor layer as a channel layer and a method of manufacturing the same are disclosed. The channel layer is patterned, and an inorganic photosensitive layer is coated for the patterning. The inorganic photosensitive layer is formed as a patterned inorganic photosensitive layer through irradiation with extreme ultraviolet light or electron beams. When heat treatment is performed on an inorganic photosensitive layer pattern, the inorganic photosensitive layer pattern is modified into the patterned inorganic semiconductor layer. Accordingly, no separate photoresist is required to form the channel layer, and an etching process using a formed photoresist pattern is not necessary, so that process efficiency is improved.

Anmelder

Firma

Industry Foundation of Chonnam National University

Land

🇰🇷 Südkorea