Nanobandbasierte Vorrichtung mit Separaten Gate- und Source- oder Drainkontakten

Details

Veröffentlichungs-Nr.

EP4730958

Anmeldetag

22. September 2025

Veröffentlichung

22. April 2026

Rechtsraum

EP

IPC

(LEE KYEN-HEE et al.)(RACHMADY WILLY et al.)(TOKYO ELECTRON LTD et al.)

Abstract

Nanoribbon-based devices with separate gate, source, and/or drain contacts can enable forming multiple devices having one or more independent contacts from different nanoribbons in a stack. In one example, an integrated circuity structure includes a stack of two or more nanoribbons, a gate electrode material at least partially around portions of the two or more nanoribbons, and source or drain regions, where discontinuities (e.g., including an insulator material) may be present between portions of the gate electrode material and/or between portions of the source or drain regions. Independent contact structures may be coupled with the separate portions of the gate electrode material and/or with the separate portions of the source or drain regions.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA