Verfahren zur Herstellung einer Graben-Schottkydiode mit Einstellbarer Durchlassspannung

Details

Veröffentlichungs-Nr.

EP4734695

Anmeldetag

17. Oktober 2025

Veröffentlichung

29. April 2026

Rechtsraum

EP

IPC

H10D8/60, H10D8/01, H10D62/60

Abstract

A Schottky diode includes a substrate with an active region. Sidewall and bottom surfaces of trench (140) extending into an epitaxial layer (104) of the substrate are lined with an insulating layer (150), and the remainder of each trench is filled with a polycrystalline silicon (polysilicon) fill (160). A doped region (164) having the same conductivity type dopant as the semiconductor substrate is implanted in the epitaxial layer at locations between adjacent trenches. A silicide (172) is provided at each polysilicon fill and a Schottky barrier (170) is provided at each doped region. An anode contact (189) for the diode contacts the silicide and Schottky barrier, and a cathode contact (196) for the diode contacts a lower surface of the substrate. The selection of a dopant concentration level for the doped region controls setting of a forward voltage V_F level for the Schottky diode.

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz

Fachgebiete