Zinkblendenstruktur-Gruppe-Iii-Nitrid
Anmelder: Cambridge Enterprise Limited, Anvil Semiconductors Limited 🇬🇧
Details
- Veröffentlichungs-Nr.
- EP4734736
- Anmeldetag
- 29. März 2018
- Veröffentlichung
- 29. April 2026
- Rechtsraum
- EP
- IPC
- H10P10/00
Abstract
A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000 °C, to a thickness of at least 0.5µm. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride.
Anmelder
- Firmen
- Cambridge Enterprise Limited
Anvil Semiconductors Limited - Land
- 🇬🇧 Großbritannien
Technologietransfer- und Kommerzialisierungsgesellschaft der University of Cambridge (Großbritannien), die Erfindungen und Ausgründungen aus der Universitätsforschung vermarktet.
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