Zweistufige Laserverarbeitung zur Herstellung eines Mems-Chips mit einer Umweltbarrierestruktur aus Polymernanofasern
Anmelder: Infineon Technologies AG 🇩🇪
Details
- Veröffentlichungs-Nr.
- EP4737388
- Anmeldetag
- 29. Oktober 2024
- Veröffentlichung
- 6. Mai 2026
- Rechtsraum
- EP
- IPC
- B81B7/00, B81C1/00, H04R1/08
Abstract
A method for producing a MEMS chip (100) with an environmental barrier structure (150) made from polymer nanofibers (151), the method comprising providing a wafer substrate (110) having plurality of adjacent through holes (131, ..., 134). The environmental barrier structure (150) is created by applying polymer nanofibers (151) onto one of the front and back sides (111, 112) of the wafer substrate (110). A plurality of MEMS chips (100) are singulated from the wafer substrate (110) by applying a two-step laser process comprising: a first laser-processing step including guiding a laser beam (160) over the one side of the wafer substrate (110) at which the polymer nanofibers (151) are applied in order to locally remove the polymer nanofibers (151) from the wafer substrate (110) and to locally uncover an underlying surface, and a subsequent second laser-processing step including applying a stealth dicing process for singulating the MEMS chips (100) by guiding a stealth dicing laser beam over the locally uncovered surfaces.
Anmelder
- Firma
- Infineon Technologies AG
- Land
- 🇩🇪 Deutschland
Deutscher Halbleiterkonzern mit Sitz in Neubiberg bei München, hervorgegangen aus Siemens. Entwickelt und fertigt Halbleiter und Systemlösungen für Automobil-, Industrie- und Sicherheitsanwendungen.
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