Einzelätz- und Pfeilerzusammenführungsverfahren für Zell- und Kammmerkmale

Details

Veröffentlichungs-Nr.

EP4739026

Anmeldetag

5. November 2025

Veröffentlichung

6. Mai 2026

Rechtsraum

EP

IPC

H10B63/10, // H10N70/20

Abstract

Methods, systems, and devices for single etch and pier merge method for cell and comb features are described. One or more pillars and one or more piers for a memory array may be patterned, aligned, and formed in one processing step. For example, the one or more piers and the one or more pillars may be patterned and etched using a pillar shape to form a set of pillar cavities. A first subset of the pillar cavities may be etched such that pairs of adjacent pillar cavities merge to form a pier cavity that is filled with a first material and a liner to form the one or more piers. A second subset of the pillar cavities may be filled with the liner and the first material to form the one or more pillars. Comb edge structures may be formed based on a third subset of the pillar cavities.

Anmelder

Firma

MICRON TECHNOLOGY, INC.

Land

🇺🇸 USA

Fachgebiete