Mosfet mit Geteiltem Gate mit Reduziertem Einschaltwiderstand und Reduzierter Gate-Drain-Kapazität

Details

Veröffentlichungs-Nr.

EP4739029

Anmeldetag

10. Oktober 2025

Veröffentlichung

6. Mai 2026

Rechtsraum

EP

Abstract

Electronic device (10), comprising: a semiconductor body (12); trenches (13) in the semiconductor body (12); an insulating field plate region (14) in each trench (13); a conductive gate region (15) in each trench (13), electrically insulated from the semiconductor body (12) by means of the respective insulating field plate region (14); a field plate region (16) in each trench (13); gate interconnections (28) within the semiconductor body (12), lateral to the trenches (13), electrically insulated from the semiconductor body (12) and electrically connected to the conductive gate regions (15) in such a way as to electrically interconnect the conductive gate regions (15) with each other; and body regions (17). The ones of the conductive gate regions (15) and the gate interconnections (28) are part of respective inactive gate structures (22') of the electronic device (10), adapted to locally inhibit the formation of a conduction channel through the body regions (17), and the others of the conductive gate regions (15) and gate interconnections (28) are part of respective active gate structures (22") of the electronic device (10), adapted to locally allow the formation of a conduction channel through the body regions (17).

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz