Mosfet mit Geteiltem Gate und Reduziertem On-Widerstand

Details

Veröffentlichungs-Nr.

EP4739030

Anmeldetag

10. Oktober 2025

Veröffentlichung

6. Mai 2026

Rechtsraum

EP

Abstract

Electronic device (10), comprising: a semiconductor body (12); trenches (13) within the semiconductor body (12) from a first side (12a) towards a second side (12b) of the semiconductor body (12) and terminating within the semiconductor body (12); an insulating field plate region (14) in each of said trenches (13); a conductive gate region (15) in each of said trenches (13) on the respective insulating field plate region (14), each being electrically insulated from the semiconductor body (12) by means of the respective insulating field plate region (14); a field plate region (16) in each of said trenches (13), buried in the respective insulating field plate region (14) and electrically insulated from the respective conductive gate region (15) and from the semiconductor body (12); gate interconnections (28) within the semiconductor body (12), from the first side (12a) towards the second side (12b), lateral to the trenches (13) and terminating in the semiconductor body (12), the gate interconnections (28) being of conductive material, insulated from the semiconductor body (12) and electrically connected to the conductive gate regions (15) in such a way as to electrically interconnect the conductive gate regions (15) with each other.

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz