Halbleitervorrichtung auf Waferebene in Chipgrösse und Verfahren dafür

Details

Veröffentlichungs-Nr.

EP4739082

Anmeldetag

27. Oktober 2025

Veröffentlichung

6. Mai 2026

Rechtsraum

EP

Abstract

A method of forming a semiconductor device is provided. The method includes applying a first non-conductive layer onto an active side of a semiconductor wafer having a plurality of semiconductor die surrounded by singulation lanes. A trench is formed in the singulation lanes surrounding the semiconductor die and filled with a non-conductive filler. A backside of the semiconductor wafer is ground to expose the non-conductive filler through the backside of the semiconductor wafer. A second non-conductive layer is applied onto the backside of the semiconductor wafer. A singulation cut is formed through a portion of the non-conductive filler to form a plurality of individual packaged semiconductor device units. A predetermined portion of the non-conductive filler remains on each sidewall of the plurality of semiconductor die.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande