Substratverarbeitungsverfahren, Verfahren zur Herstellung eines Halbleiterbauelements, Programm und Substratverarbeitungsvorrichtung

Details

Veröffentlichungs-Nr.

EP4741529

Anmeldetag

29. September 2025

Veröffentlichung

13. Mai 2026

Rechtsraum

EP

IPC

C23C16/455, C23C16/34(OGAWA ARITO et al.)

Abstract

It is possible to improve a film forming rate. There is provided a technique that includes: (a) supplying a first gas containing a primary element constituting a film and a halogen element to a substrate; (b) supplying a first reducing gas containing hydrogen to the substrate; (c) supplying a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate.

Anmelder

Firma

Kokusai Electric Corp.

Land

🇯🇵 Japan