Sic-Einkristallsubstrat, Verfahren zur Herstellung von Sic-Einkristallen und Vorrichtung zur Herstellung von Sic-Einkristallen

Details

Veröffentlichungs-Nr.

EP4741541

Anmeldetag

31. Oktober 2025

Veröffentlichung

13. Mai 2026

Rechtsraum

EP

IPC

(SENIC INC et al.)(TOYOTA MOTOR CORP et al.)(SCHULZE HANS-JOACHIM et al.)(TOYOTA MOTOR CO LTD et al.)

Abstract

In an SiC single crystal substrate including a first main surface and a second main surface opposite to the first main surface, the SiC single crystal substrate in which the first main surface is a surface that tilts relative to a {0001} plane at an off-cut angle equal to or larger than 0° and equal to or smaller than 8° is used. In a distribution of phase differences obtained by measuring a phase difference between a first emission light and a second emission light emitted from the second main surface by making an incident light with two mutually perpendicular polarization components and a wavelength of 520 nm into the first main surface, an average value of the phase differences is equal to or smaller than 10 nm, and the maximum value of the phase differences is equal to or smaller than 70 nm.

Anmelder

Firma

Proterial, Ltd.

Land

🇯🇵 Japan