Speicherarchitekturen mit Ambipolaren Halbleiterkanälen

Details

Veröffentlichungs-Nr.

EP4742247

Anmeldetag

12. November 2025

Veröffentlichung

13. Mai 2026

Rechtsraum

EP

Abstract

Methods, systems, and devices for memory architectures with ambipolar semiconductor channels are described. A memory device may include multiple conductors that are each associated with a respective activation line of a memory array, and a pillar that extends through the conductors. The pillar may include a semiconductor material extending along a length of the pillar and associated with an ambipolar channel along the length of the pillar. The memory device may also include multiple storage portions each including one or more storage materials (e.g., to store a charge, a dipole polarization, or a combination thereof). Each storage portion may be associated with a respective memory cell of the memory array and may be positioned between a respective one of the conductors and a respective portion of the semiconductor material along the length of the pillar.

Anmelder

Firma

MICRON TECHNOLOGY, INC.

Land

🇺🇸 USA