Dreidimensionale Speichervorrichtungen und Verfahren zur Formung davon

Details

Veröffentlichungs-Nr.

EP4742851

Anmeldetag

30. Juni 2021

Veröffentlichung

13. Mai 2026

Rechtsraum

EP

IPC

(FASTOW RICHARD et al.)

Abstract

In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes an array of memory cells, a first peripheral circuit of the array of memory cells, and a polysilicon layer between the array of memory cells and the first peripheral circuit. The first peripheral circuit includes a first transistor. The second semiconductor structure includes a second peripheral circuit of the array of memory cells. The second peripheral circuit includes a second transistor.

Anmelder

Firma

Yangtze Memory Technologies Co., Ltd.

Land

🇨🇳 China