Lippert Stachow Patentanwälte Rechtsanwälte

The present disclosure relates to an auto-darkening filter for a welding helmet, comprising an outer shell, a control circuit (20), an auto-darkening panel and an adjustment assembly; the outer shell (10) including a first shell body (11) and a second shell body (12) provided oppositely to each other, wherein when the auto-darkening filter is installed on the welding helmet, the first shell body faces towards a user's face, the first shell body has an annular projection (111) protruding from its outer surface, the annular projection is used to block liquid entering the outer shell, both of the control circuit and the auto-darkening panel are disposed in an interior of the outer shell, the auto-darkening filter is electrically connected to the control circuit; the adjustment knob (31) is used for the user to the adjust various operating parameters of the auto-darkening filter; sweat when generating from the user will flow on the outer surface of the first shell body and cannot enter the outer shell via the annular projection to avoid corrosion and damage of electronic components inside the auto-darkening filter due to liquid ingress. The present disclosure also relates to a welding helmet comprising a helmet body and the auto-darkening filter.

A memory device, a memory system, and a method for data calculation with the memory device are provided. The memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. The peripheral circuit includes page buffers configured to store first data transmitted from a data interface of the memory device and to sense second data from the array of memory cells. The peripheral circuit further includes at least one process unit coupled to the page buffers via a data-path bus of the peripheral circuit and configured to perform calculation based on the first data and the second data. The peripheral circuit further includes a control logic configured to program the second data into the array of memory cells.

A cutting apparatus cuts flat paper S transported by a transport unit 60. The cutting apparatus 1 includes a rotary cutter 10 configured to cut the flat paper S in a direction intersecting a transport direction A, a sheet detection sensor 20 arranged upstream of the rotary cutter 10 on a transport path of the flat paper S and configured to detect a sheet end of the flat paper S, and a cutter controller 30 configured to control the rotary cutter 10. After detection of the sheet end of the flat paper S by the sheet detection sensor 20, the cutter controller 30 controls the speed of the rotary cutter 10 based on a transport speed of the transport unit 60, a position of a cutting blade 12 provided to the rotary cutter 10, and a cutting position on the flat paper S.

In certain aspects, a memory device includes memory strings each including a drain select gate (DSG) transistor, memory cells, and a source select gate (SSG) transistor, and a peripheral circuit coupled to the memory strings. The peripheral circuit is configured to, in a program operation, program a select memory cell of the memory cells in a select memory string of the memory strings, and inhibit an unselect memory cell of the memory cells in an unselect memory string of the memory strings. The peripheral circuit includes a word line driver configured to in a pre-pulse period and a post-pulse period in a first loop of the program operation, turn off the DSG transistor in the unselect memory string, and in at least one of a pre-pulse period or a post-pulse period in a second loop of the program operation after the first loop, turn on the DSG transistor in the unselect memory string.

A system for making a cross-linked and/or cured foam comprises first and second containers for liquid components, a source for pressured gas, a first mixer for dispersing the gas in one of the liquid components, a second mixer for mixing the dispersion with the other liquid component, thereby starting a crosslinking and/or curing reaction, and means for application of the reaction mixture at the desired place is disclosed. A method for use of this system to make a cross-linked and/or cured foam is also disclosed. The system and method avoid climate-harmful emissions from blowing agents. The system and method are useful for making foams for use in construction work, e.g. for thermal insulation, gap filling, et cetera, or for use as an adhesive.

A memory device, a memory system, and a method for data calculation with the memory device are provided. The memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. The peripheral circuit includes a static random-access memory (SRAM) configured to obtain first data transmitted from a data interface of the memory device, page buffers configured to sense second data from the array of memory cells, and at least one process unit coupled to the SRAM and the page buffers via a data-path bus of the peripheral circuit. At least one process unit is configured to perform calculation based on the first data and the second data. The peripheral circuit further includes a control logic configured to program the second data into the array of memory cells.

A non-volatile memory device and a control method are provided e disclosed. The non-volatile memory device includes a memory array, a bit line, a plurality of word lines, a first control circuit, and second control circuit. The bit line is connected to a first memory string of the memory array. The plurality of word lines are connected to memory cells of the first memory string and each word line is connected to a respective memory cell. The first control circuit is configured to apply a bit line pre-pulse signal to the bit line during a pre-charge period. The second control circuit is configured to apply a word line signal to a selected word line and apply a plurality of word line pre-pulse signals to word lines disposed between a select gate line and the selected word line. Voltage levels of the plurality of word line pre-pulse signals are incremental.

Die Erfindung betrifft eine Leuchtanordnung umfassend mindestens vier Lichtquellen (1.1, 1.2, 1.3, 1.4, 1.5) sowie mindestens eine erste Optikelementanordnung (2) und eine zweite Optikelementanordnung (3), wobei die erste Optikelementanordnung (2) mindestens zwei erste Optikelemente (2.1, 2.2) und die zweite Optikelementanordnung mindestens zwei zweite Optikelemente (3.1, 3.2, 3.3) umfasst, wobei jedes Optikelement (2.1, 2.2, 3.1, 3.2, 3.3) jeweils einer der Lichtquellen (1.1, 1.2, 1.3, 1.4, 1.5) zugeordnet und dergestalt an ihr angeordnet ist, dass von der Lichtquelle (1.1, 1.2, 1.3, 1.4, 1.5) emittiertes Licht in einen Lichteinkoppelabschnitt des Optikelements (2.1, 2.2, 3.1, 3.2, 3.3) einkoppelbar und von einem Lichtauskoppelabschnitt des Optikelements (2.1, 2.2, 3.1, 3.2, 3.3), der von dem Lichteinkoppelabschnitt beabstandet ist, gemäß dessen optischen Eigenschaften gelenkt auskoppelbar ist, wobei sich die ersten Optikelemente (2.1, 2.2) in ihren optischen Eigenschaften von den zweiten Optikelementen (3.1, 3.2, 3.3) unterscheiden, wobei die ersten Optikelemente (2.1, 2.2) derart angeordnet und ausgebildet sind, dass diese ein zwischen ihren Außenflächen angeordnetes erstes Aufnahmevolumen (4) horizontal begrenzen, wobei die ersten Optikelemente (2.1, 2.2) und die zweiten Optikelemente (3.1, 3.2, 3.3) derart zueinander angeordnet sind, dass mindestens ein zweites Optikelement (3.1, 3.2, 3.3) in das erste Aufnahmevolumen (4) vertikal eingreift. (Fig. 1a)

The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes disposing an alternating dielectric stack over a substrate, wherein the alternating dielectric stack includes first dielectric layers and second dielectric layers alternatingly stacked on the substrate. The method also includes forming a channel structure penetrating through the alternating dielectric stack and extending into the substrate, wherein the channel structure includes a channel layer disposed on a sidewall of a memory film. The method further includes removing the substrate and a portion of the memory film that extends into the substrate to expose a portion of the channel layer; and disposing an array common source (ACS) on the exposed portion of the channel layer.

Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Entformung wenigstens eines Süßwarenartikels (2) aus einer Gießform, der mittels einer Greifanordnung (5) auf dem Kopf stehend durch Herausbewegen des Süßwarenartikels aus einer Kavität (4) der Gießform (3) entformt werden soll, wobei die Greifanordnung (5) wenigstens ein Saugelement (6) umfasst, mit dem der nach oben stehende im Wesentlichen flache Boden (32) des Süßwarenartikels (2) mittels Unterdrucks angesogen wird, wobei bevor oder nachdem das Saugelement (6) den Boden (32) des Süßwarenartikels (2) angesogen hat eine zusätzliche Ablösungsbewegung erzeugt wird, die wechselnde Kräfte in den Süßwarenartikel (2) einleitet, welche in dem Süßwarenartikel (2) Verformungen erzeugen, die sich bis an seine äußere Grenzschicht auswirken und seine Haftkraft an der Kontaktfläche der Kavität (4) verringern, und wobei der Süßwarenartikel (2) dann von dem Saugelement (6) vollständig aus der Kavität (4) herausgenommen und durch Abschaltung des Unterdrucks auf dem Kopf stehend übergeben wird.