Integrierte Gate-All-Around-Schaltungsstrukturen mit Source- oder Drain-Strukturen mit Substratanschlussteilen

Details

Veröffentlichungs-Nr.

EP4742854

Anmeldetag

12. Oktober 2022

Veröffentlichung

13. Mai 2026

Rechtsraum

EP

Abstract

Gate-all-around integrated circuit structures having source or drain structures with substrate connection portions, and methods of fabricating gate-all-around integrated circuit structures having source or drain structures with substrate connection portions, are described. For example, an integrated circuit structure comprises: a sub-fin; a vertical arrangement of nanowires over the sub-fin; a first source or drain structure at a first end of the vertical arrangement of nanowires; a second source or drain structure at a second end of the vertical arrangement of nanowires; a gate stack over and around each of the nanowires of the vertical arrangement of nanowires and laterally between the first source or drain structure and the second source or drain structure; a first conductive contact on the first source or drain structure; and a second conductive contact on the second source or drain structure.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA