Integrierte Gate-All-Around-Schaltungsstrukturen mit Elektrostatischer Entladungs-(esd)-Klemme

Details

Veröffentlichungs-Nr.

EP4746638

Anmeldetag

28. Oktober 2025

Veröffentlichung

20. Mai 2026

Rechtsraum

EP

IPC

H10D89/60, // H10D30/67

Abstract

Gate-all-around integrated circuit structures having electrostatic discharge (ESD) clamps are described. For example, an integrated circuit structure includes a p channel device having a source structure and a drain structure. An n channel device is vertically stacked with the p channel device, the n channel device having a source structure and a drain structure. The source structure of the n channel device is electrically connected to the source structure of the p channel device. The drain structure of the n channel device is electrically connected to the drain structure of the p channel device.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA

Fachgebiete