Halbleitergehäuse mit Höcker

EP4746678 20. Mai 2026

Anmelder: SK hynix Inc. 🇰🇷

Details

Veröffentlichungs-Nr.
EP4746678
Anmeldetag
16. Oktober 2025
Veröffentlichung
20. Mai 2026
Rechtsraum
EP
Offizieller Volltext

Abstract

A semiconductor package includes a wiring structure, a first bump, and a semiconductor chip. The wiring structure includes a first electrode and has a first surface and a second surface that faces away from the first surface. The second surface of the wiring structure includes a recessed area that overlaps the first electrode. The first bump includes a first conductive pillar on the first surface of the wiring structure and a first solder layer on the first conductive pillar. The first bump contacts the first electrode. The first electrode includes a first section and a second section. The first section of the first electrode is disposed between the first surface of the wiring structure and the second surface of the wiring structure. The second section of the first electrode has a lower surface that is included in the first surface of the wiring structure. The horizontal width of the first conductive pillar is less than the horizontal width of the first electrode. A semiconductor chip is disposed above the second surface of the wiring structure.

Anmelder

Firma
SK hynix Inc.
Land
🇰🇷 Südkorea
🇰🇷 SK hynix

Südkoreanischer Halbleiterhersteller, der Speicherchips wie DRAM und NAND-Flash für Computer, Server und mobile Geräte produziert.

59 Patente in unserer Datenbank

Vertreten von

  • Isarpatent

Noch Fragen?

Wir helfen Ihnen gerne weiter. Schreiben Sie uns einfach.

Kontakt aufnehmen