Speichervorrichtung und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4749624

Anmeldetag

10. November 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

IPC

G11C7/18, H10B12/00, G11C5/02

Abstract

A memory device including a first substrate including a cell region and a peripheral region disposed around the cell region; a memory cell array disposed in the cell region of the first substrate; a second substrate disposed on the memory cell array; peripheral transistors disposed on the second substrate and connected to the memory cell array; a first insulating layer disposed in a trench that is located in the peripheral region of the first substrate, and including high density plasma oxide; and a second insulating layer on the first insulating layer.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea