Verfahren zur Herstellung eines Nanobandbasierten Transistors mit Opferschicht über Top-Nanoband

Details

Veröffentlichungs-Nr.

EP4750251

Anmeldetag

31. Oktober 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

Abstract

Nanoribbon-based transistor fabrication techniques that use a sacrificial layer over the nanoribbon stack may enable more uniform deposition of the gate electrode material over the top nanoribbon in addition to protecting the top nanoribbon from damage resulting from subsequent processing. In one example, the technique may involve depositing a sacrificial layer (706), e.g., a dielectric material, over a stack of alternating layers of semiconductor material (702) that will subsequently be patterned into a fin and formed into a nanoribbon stack. After patterning the stack into a fin and releasing the nanoribbons of semiconductor material, the layer of sacrificial material (706) may act as a dummy nanoribbon over the top nanoribbon to enable deposition of the gate electrode material over the top nanoribbon having the same properties as the gate material between the nanoribbons.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA