Mosfet mit Geteiltem Gate und Verbesserter Zuverlässigkeit

Details

Veröffentlichungs-Nr.

EP4750255

Anmeldetag

7. November 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

Abstract

Electronic device (10), comprising: a semiconductor body (12); trenches (13) in the semiconductor body (12) from the first side (12a) towards the second side (12b), terminating in the semiconductor body (12) and arranged at the side of each other along a second axis (X) orthogonal to the first axis (Z); a respective insulating field plate region (14) with a main body (14a) in each of said trenches (13), covering the lower and lateral walls of the respective trench (13); a respective field plate region (16) in each of said trenches (13), each field plate region (16) being buried in the insulating field plate region (14) and being electrically insulated from the semiconductor body (12) by means of the insulating field plate region (14); and a respective first conductive gate region (15a) for each of said trenches (13), each first conductive gate region (15a) extending in the semiconductor body (12) from the first side (12a) towards the second side (12b) and terminating in the semiconductor body (12), extending laterally to the main body (14a) of the respective insulating field plate region (14) along the second axis (X), being of conductive material and being electrically insulated from the semiconductor body (12) and the respective field plate region (16).

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz